Heteroepitaxial growth of InN and InGaN alloys on GaN(0001) by molecular beam epitaxy
Institution: | University of Hong Kong |
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Department: | |
Degree: | PhD |
Year: | 2005 |
Keywords: | Crystal growth; Indium alloys.; Gallium compounds.; Molecular beam epitaxy. |
Record ID: | 1160504 |
Full text PDF: | http://dx.doi.org/10.5353/th_b3636355 |
published_or_final_version abstract Physics doctoral Doctor of Philosophy