AbstractsEngineering

Development of a heat treatment method to form a duplex microstructure of lower bainite and martensite in AISI 4140 stee

by Erik Claesson




Institution: KTH Royal Institute of Technology
Department:
Year: 2014
Keywords: AISI 4140; 326C; 326F; Isothermal heat treatment; Martensite; Bainite; Molten salt; vacuum furnace; gas quenching.; Engineering and Technology; Materials Engineering; Metallurgy and Metallic Materials; Teknik och teknologier; Materialteknik; Metallurgi och metalliska material; Master of Science - Materials Science and Engineering; Teknologie masterexamen - Materialteknik; Metallografi; Physical Metallurgy
Record ID: 1330848
Full text PDF: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-165084


Abstract

Research on bainite and martensite structures has indicated that lower bainite needles have a refining effect on the lath martensitic structure. Lower bainte needles partitions prior austenite grains and will consequently have a refining effect on the subsequent formed lath martensite. Smaller austenite grains will result in smaller lath martensitic packets and blocks and will result in enhanced mechanical properties.   In order to create a variation of lower bainte structure in a matrix of martensite, two different heat treating methods were tested. The work was focused towards the formation of lower bainite during isothermal heat treating in molten salt, above and below the MS-temperature. Both un-tempered and tempered samples were analyzed .Two different materials were tested, both were AISI 4140 but with a slightly difference in hardenability. The material provided by Ovako Steel is 326C and 326F the later had a higher hardenability. In order to better distinguish the two structures from each other when studied under a microscope, a variation of etching methods were tested.  It was possible to create a variation of lower bainite structures in a matrix of martensite.  326F shows less amount of lower bainite and provides a higher average surface hardness before tempering.