Optical properties of nitrogen doped gallium arsenide under pressure
Institution: | Iowa State University |
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Department: | |
Year: | 2002 |
Keywords: | Physics and astronomy; Condensed matter physics; Condensed Matter Physics |
Record ID: | 1727532 |
Full text PDF: | http://lib.dr.iastate.edu/rtd/1032 http://lib.dr.iastate.edu/cgi/viewcontent.cgi?article=2031&context=rtd |
We present new insights into the problem of the isoelectronic nitrogen (N) impurity in gallium arsenide (GaAs). By performing photoluminescence (PL), photoluminescence excitation (PLE), transmission, and time decay measurements through a broad range of pressures, we were able to positively identify and track previously unseen states arising from the N impurity.;The first observation we make is of a dramatic increase in luminescence as N forms an isolated state within the gap around 22kbar. We attribute this effect to N acting as a nonradiative trapping center while still resonant with the conduction band states. We also note the appearance, above 22kbar, of a broad band-to-acceptor like emission below the band edge, which we associate with a band to N acceptor transition.;The next major observation we report is of the excited state of the N x exciton. We find this state to be clearly identifiable for the pressure range ~25kbar to ~30kbar, and is weak in PL, but shows enormous absorption signals in PLE and transmission. The spacing of this level from Nx-B is in good agreement with the established theory of shallow acceptor levels.;We then move on to the identification of a second bound state associated with N. This state, designated NGamma, was previously reported for the GaP system and the GaAs1-xPx alloy, but has not, until now, been positively identified in GaAs. We find the state to be degenerate with the shallow donor level for pressures up to ~30kbar. The emission from this state is found to possess unique N characteristics and is seen to move in pressure with both shallow and deep like properties.;We conclude with a discussion of the process of lasing in N doped GaAs. We present data consistent with previous studies of the lasing process in GaAs. However, we find an intriguing trend with pressure as we approach the Gamma-X crossover. The lasing gain begins to shift in a manner similar to NGamma . In fact, NGamma appears to act as an upper bound on the laser emission. We believe this to be preliminary evidence of the influence of N on the lasing mechanism.