Abstracts

III-V compound semiconductors are used in, amongmany other things, high-frequency electronics. They are alsoconsidered as a replacement for silicon in CMOS technology. Yet, aIII-V transistor outperforming state-of-the-art silicon devices inVLSI-relevant metrics has not yet decisively been demonstrated. Inthis work, the limits of III-V FET performance, for both RF andVLSI applications, are explored experimentally.