AbstractsLaw & Legal Studies

Compact Modelling Of Double-Gate MOSFET

by Igor Leonidovich Erokhin

Institution: University of Oslo
Year: 1000
Keywords: VDP::420
Record ID: 1276271
Full text PDF: http://urn.nb.no/URN:NBN:no-23712




The requirements for high precision and high speed of compact models demand new approaches to old challenges while raising new ones. In this paper I investigate the following: DG MOS Transistor modelling for integrated circuit design; Applications of conformal mapping to compact modelling; How this technique can be applied to model DG MOS Transistor; Prerequisites for a valid SPICE-like model of this device.