AbstractsLaw & Legal Studies

Compact Modelling Of Double-Gate MOSFET

by Igor Leonidovich Erokhin




Institution: University of Oslo
Department:
Year: 1000
Keywords: VDP::420
Record ID: 1292189
Full text PDF: https://www.duo.uio.no/handle/10852/10122


https://www.duo.uio.no/bitstream/10852/10122/2/Erokhin.pdf


Abstract

The requirements for high precision and high speed of compact models demand new approaches to old challenges while raising new ones. In this paper I investigate the following: DG MOS Transistor modelling for integrated circuit design; Applications of conformal mapping to compact modelling; How this technique can be applied to model DG MOS Transistor; Prerequisites for a valid SPICE-like model of this device.