|Institution:||University of Rochester|
|Full text PDF:||http://hdl.handle.net/1802/32424|
Materials and device research is presented on thegrowth and characterization of GaInAsP and AlGaInP to demonstratethe effectiveness, for III-V semiconductor materials development,of the valved cracker solid phosphorus source. Incorporationdifferences into GaInAsP between As and As, and P and P arestudied. In preparation for 1.3 m laser development, the growthparameters for high quality GaInAsP are determined. Low threshold1.3 m InAsP/GaInAsP lasers are demonstrated and characterized.Laser processing procedures applicable to the InP material systemare also described. Material quality comparisons are made onsamples grown by the two prevailing solid phosphide sources; thevalved cracker phosphorus source and the GaP effusion cell. Roomtemperature photoluminescence measurements are used to determinethe optimum growth conditions, when using each phosphide source,for a test GaInP/AlGaInP laser core structure. Secondary ion massspectroscopy is used to compare oxygen contamination of the twophosphide sources and to investigate the influence of crackertemperature on oxygen contamination. The potential of the GaPsource to produce white phosphorus deposits in the growth chamberis also explored.