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A GAN BASED DUAL ACTIVE BRIDGE CONVERTER TO INTERFACE ENERGYSTORAGE SYSTEMS WITH PHOTOVOLTAIC PANELS

by Hassan Hassan

Institution:	Miami University
Year:	2017
Keywords:	Electrical Engineering; Wide Band Gap; Gallium Nitride; Dual Active Bridge; Bidirectional Converter; Isolated Bidirectional Converter; Photovoltaic; ZVS
Posted:	02/01/2018
Record ID:	2157193
Full text PDF:	http://rave.ohiolink.edu/etdc/view?acc_num=miami1512161344172419

Abstract

Renewable energy sources are intermittent in nature.Therefore, they are often used in conjunction with energy storagesystems to ensure the continuous flow of power. Bidirectional DC/DCconverters serve as an intermediary between the energy storagehardware and the inverter connected to the grid. Dual active bridge(DAB) converters are well suited for this application, especiallywhen the power is greater than 1 kW. They offer bi-directionalpower flow and can achieve zero-voltage-switching (ZVS).Furthermore, gallium nitride (GaN) based transistors have manyattributes that enable them to outperform silicon (Si) MOSFETs inthis topology. This research compares the performance of a DABconverter designed with GaN transistors to one built with SiMOSFETs. A hardware prototype was built for 48 V to 400 Vconversion with a rated power of 4 kW.Advisors/Committee Members: Mark, Scott (Advisor).